2025/06/23 by Tian, Xiaoyang, Lu, Mowei, Udrea, Florin +1
#Applied Physics (physics.app-ph) #FOS: Electrical engineering #FOS: Physical sciences #Systems and Control (eess.SY) #electronic engineering #information engineering
paper · doi:10.48550/arxiv.2506.18635
Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a hybrid single-pulse and Sawyer-Tower test method to analyse switching characteristics of field-effect transistors (FET), which not only eliminates overlap losses but also mitigates the effects of current backflow observed in traditional double-pulse testing. Through a precise loss separation model, it enables an accurate quantification of switching losses and provides a refined understanding of device energy dissipation mechanisms. We validate the hysteresis data and loss separation results through experimental measurements on a 350-W LLC converter, which further offers deeper insights into transistor dynamic behaviour and its dependence on operating conditions. This method is applicable to a wide range of transistors, including emerging SiC and GaN devices, and serves as a valuable tool for device characterization and optimization in power electronics.