2022/04/29 by Guangze Zu, Huiqing Wen, Yinxiao Zhu +5
Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Silicon Carbide Semiconductor Technologies #Semiconductor materials and devices
paper · doi:10.1109/ted.2022.3168238
Pulse test techniques are widely adopted in characterizing both the static and dynamic performances of semiconductor devices considering various device structures and operating conditions. For gallium nitride (GaN) devices, due to the current collapse phenomenon, fast and accurate measurement of their key electrical parameters, such as dynamic ON-state resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">R_\text ds, \scriptscriptstyle ON </tex-math></inline-formula> , switching rising time, fall time, switching losses, and short-circuit (SC) robustness, becomes essential. This article presents a comprehensive review of state-of-the-art pulse test setup methods such as the double-pulse test (DPT), multiple-pulse test (MPT), and SC test (SCT) for the first time, which facilitates the GaN device structure design and practical applications in high efficiency and power density power converters.