vix.ing · top · new · best · stats · spec

Power Cycling Test Bench for Accelerated Life Testing for Reliability\n Assessment of SiC-MOSFET in Extreme Offshore Environment

2020/01/15 by Shiva Geraei, Geraei, Shiva, Saeed Hasanpour Aghdam +1
Engineering · Materials Science · #FOS: Electrical engineering #High voltage insulation and dielectric phenomena #Non-Destructive Testing Techniques #Plasma Diagnostics and Applications #Silicon Carbide Semiconductor Technologies #Systems and Control (eess.SY) #electronic engineering #information engineering

paper · pdf · doi:10.48550/arxiv.2001.05580

openalex publication_date 2020/01/15 · openalex created_date 2022/07/26 · openalex updated_date 2026/07/28

Abstract

The reliability of power semiconductor switches is important when considering\ntheir vital role in power electronic converters for downhole subsea\napplications. Respect to technology advancements in material sciences, power\nMOSFETs with wide band gap materials have been proposed such as silicon carbide\n(SiC) and gallium nitride (GaN) as an alternative to existing silicon (Si)\nbased MOSFETs and IGBTs. However, reliability analysis should be performed\nbefore substituting SiC-MOSFETs in the place of existing Si-MOSFETs and IGBTs.\nDue to costly equipment of experimental test setup for accelerated life test, a\ngood reliable and precise simulation-based test bench should be used to test\nthe life test procedure before implementing actual hardware. Therefore, this\npaper introduces a power cycle (PC) test bench for accelerated life testing for\nreliability assessment of SiC-MOSFET in harsh offshore environment. The\nintroduced test bench is a simulation-based of power switch in SimScape and\nLTspice and has been validated with datasheet of 1.2 kV SiC-MOSFET,\nCAS300M12BM2 by CREE. Preliminary hardware circuits are also shown for further\nexperimental tests. The captured data from the Device-Under-Test (DUT) in\ndifferent ambient temperatures are envisioned and provide critical information\nabout the failure mechanisms and lifetime characteristics of power devices. The\nprovided lifetime characteristics data of SiC-MOSFET can be used to\nstatistically estimate the Remaining-Useful-Lifetime (RUL) of component in a\nreal application such as downhole motor drives.\n

Related