2021/07/21 by Alexander Tsibizov, Tsibizov, Alexander, Roger Stark +3
Engineering · #Applied Physics (physics.app-ph) #Electromagnetic Compatibility and Noise Suppression #FOS: Physical sciences #Multilevel Inverters and Converters #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.2107.10408
openalex publication_date 2021/07/21 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28
Inter-terminal capacitances (ITCs) have major influence on the dynamic\nperformance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is\nrequired in order to perform accurate and predictive compact model simulations\nof their dynamic performance. Since commercial SiC MOSFETs are capable of\noperating in a wide range of temperatures, it is important to know the values\nof ITCs in the whole temperature range of operation. Direct measurements of the\nITCs with standard equipment is possible only at low current levels (i.e. in\nthe off-state (Vgs < Vth) for Vds > 0 V), however their values in the on-state\n(Vgs>Vth) also influence the MOSFETs switching performance. In this work, ITCs\nof a planar SiC MOSFET in the on-state are studied by the means of a calibrated\nTCAD model, revealing substantial temperature dependence in the range of\n300-450 K. In the first approximation, this temperature dependence of the ITCs\ncan be explained by a weaker temperature dependence of the MOSFET channel\nresistance in comparison to its JFET and epitaxial layer resistances. In\naddition, it is shown that at high frequencies stray inductances of the\nTO-247-3 package result in a change of the extracted values of the on-state\nITCs. This effect is already notable at 1 MHz.\n