Supersaturation model for InN PA-MOCVD

2020/03/23 by Zaheer Ahmad, M. W. Vernon, Ahmad, Zaheer +9
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Metal and Thin Film Mechanics #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.2003.10067

11 pages, 6 figures

arxiv created 2020/03/23 · openalex publication_date 2020/03/23 · arxiv updated 2020/03/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We developed a thermodynamic supersaturation model for plasma-assisted metalorganic chemical vapor deposition of InN. The model is based on the chemical combination of indium with plasma-generated atomic nitrogen ions. Indium supersaturation was analyzed for InN films grown by PA-MOCVD with varying input flow of indium precursor. Raman spectroscopy, X-ray diffraction, and atomic force microscopy provided feedback on structural properties and surface morphology of grown films. Growth parameter variation effect on In supersaturation was analyzed. InN films grown at varying growth parameters resulting in the same In supersaturation value exhibit similar structural properties and surface morphology.

Citations

• High-Temperature Vaporization Behavior of Oxides II. Oxides of Be, Mg, Ca, Sr, Ba, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, and Hg

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