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Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system

2007/05/01 by Abdul Kadir, Kadir, Abdul, Tapas Ganguli +11
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #cond-mat.mtrl-sci #cond-mat.other

paper · pdf · doi:10.48550/arxiv.0705.0105

4 pages, 2 figures

arxiv created 2007/05/01 · arxiv updated 2009/12/01

Abstract

From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effect of growth parameters on the lattice constants of the InN layer. The layers are under significant internal hydrostatic stress which influences the optical properties. Samples typically fall into two broad categories of stress, with resultant luminescence emission around 0.8eV and 1.1eV. We can correlate the internal stress in the layer and the value of the optical absorption edge, and the PL emission wavelength.

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