Impact of plasma potential and plasma sheath composition on the InN PAMOCVD growth kinetics and structural properties

2023/08/22 by Zaheer Ahmad, Ahmad, Zaheer, Alexander Kozhanov +1
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Plasma Physics (physics.plasm-ph) #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2308.11790

openalex publication_date 2023/08/22 · openalex created_date 2023/08/25 · openalex updated_date 2026/07/28

Abstract

In this paper, we present the effect of various growth parameters of PA-MOCVD on the plasma potential. The impact of varying plasma potential on the growth and structural properties of the InN films, and how the growth process and film properties will be affected if an external DC bias perturbs the plasma potential.

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