2009/05/19 by C. Denker, Christian Denker, Denker, C. +7
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Optical Coatings and Gratings #Plasma Diagnostics and Applications #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0905.3133
arxiv created 2009/05/19 · openalex publication_date 2009/05/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The growth of arrays of single nanorods on a Si(111) substrate has been achieved with a thin molybdenum mask lithographically patterned with holes smaller than 60 nm.