Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models

2021/04/17 by Tengteng Lu, Yuanke Zhang, Lu, Tengteng +9
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Silicon Carbide Semiconductor Technologies #Silicon and Solar Cell Technologies

paper · pdf · doi:10.48550/arxiv.2104.08467

openalex publication_date 2021/04/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evolutionary strategy (MES) and dual-model modeling (BSIM3v3 and EKV2.6). Both methods are based on the principle of kink effect. The first method considers impact ionization and substrate current induced body effect (SCBE), and the other considers the change of the freeze-out substrate potential. By applying the above two methods, kink can be corrected to improve the agreement between simulation data and measurement data, and obtain more accurate model parameters. These two methods can be used in further work for cryogenic device modeling and circuit design.

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