Generic Cryo-CMOS Device Modeling and EDACompatible Platform for Reliable Cryogenic IC Design

2022/11/10 by Zhidong Tang, Zewei Wang, Tang, Zhidong +29
Engineering · #Advancements in Semiconductor Devices and Circuit Design #FOS: Electrical engineering #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies #Systems and Control (eess.SY) #electronic engineering #information engineering

paper · pdf · doi:10.48550/arxiv.2211.05309

openalex publication_date 2022/11/10 · openalex created_date 2022/11/16 · openalex updated_date 2026/07/28

Abstract

This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical study is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM, 5-bit flash ADC and 8-bit current steering DAC are designed, and their performance is readily investigated and optimized on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design.

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