Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well

2024/03/20 by A. V. Snegirev, V. M. Kovalev, Snegirev, A. V. +9
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.2403.13387

openalex publication_date 2024/03/20 · openalex created_date 2024/03/22 · openalex updated_date 2026/07/28

Abstract

The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings.

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