Transport in a two-dimensional disordered electron liquid with isospin degrees of freedom

2016/09/26 by I. S. Burmistrov, Burmistrov, I. S. · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.1609.07874

openalex publication_date 2016/09/26 · openalex created_date 2016/10/07 · openalex updated_date 2026/07/28

Abstract

Recent theoretical results on transport in a two-dimensional disordered electron liquid with spin and isospin degrees of freedom are reviewed. A number of experimental features in temperature dependence of resistivity at low temperatures in Si-MOSFET, n-AlAs quantum well and double quantum well heterostructures is explained. Novel behavior of low-temperature resistivity at low temperature in electron systems with isospin degrees of freedom are predicted.

Cited by

• Finkel'stein nonlinear sigma model: interplay of disorder and interaction in 2D electron systems

Related

• Low-frequency conductivity of a non-degenerate 2D electron liquid in strong magnetic fields
• Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
• Temperature-dependent transport of correlated disordered electrons: Elastic vs. inelastic scattering
• Transport in a spin-incoherent Luttinger liquid
• Emergence of quasimetallic state in a disordered two-dimensional electron gas due to strong interactions