2018/03/14 by E. O. Melezhik, Evgen O. Melezhik, Ф. Ф. Сизов +9
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1803.05514
19 pages, submitted to Semiconductor Physics, Quantum Electronics and Optoelectronics
arxiv created 2018/03/14 · openalex publication_date 2018/03/14 · arxiv updated 2018/03/16 · openalex created_date 2022/10/03 · openalex updated_date 2026/07/28
Dynamical screening function of the two-dimensional electron gas in wide HgTe quantum well (QW) has been numerically modelled in this work. Calculations were provided in the Random Phase Approximation (RPA) framework and were based on Lindhard equation. Our simulations directly incorporated non-parabolicity of bulk 2D carriers spectrum, which was obtained by full 8-band k.p method. In the literature exists data that transport properties of HgTe QWs are explained by graphene-like screening. We provide the comparison of the screening function for the Schrodinger fermions in the inverted bands HgTe QW with the appropriate screening function for graphene monolayer with the Dirac fermions. In addition, the dependencies of HgTe-specific screening function on temperature, scattering wave-vector and frequency are studied with the purpose to study the transport properties under high-frequency radiation the QWs structures to be used as THz detectors. Plasmon frequencies of 2DEG in HgTe quantum well under study were calculated in the long-wavelength limit for T=77K.