2020/10/30 by V Ya Aleshkin, V. Ya. Aleshkin, G Alymov +12
Engineering · Medicine · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Ocular and Laser Science Research #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.2010.16120
arxiv created 2020/10/30 · arxiv updated 2020/11/02
The dispersion laws of two-dimensional plasmons in narrow-gap HgTe/CdHgTe quantum wells are calculated taking into account the spatial dispersion of the electron susceptibility. At the energy scale of the band gap the dependence of plasmon frequencies on the wave vector is shown to be close to linear that changes significantly the critical concentration of noneqilibrium electron-hole gas corresponding to "switching-on" the carrier recombination with plasmon emission. The recombination rates with the plasmon emission have been calculated.