2017/12/13 by Gudina, S. V., Arapov, Yu. G., Neverov, V. N. +8
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · doi:10.48550/arxiv.1712.04776
We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Estimations for the degree of the carrier localization length divergence reveal a decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization - delocalization processes in the QH regime for the system under study.