2024/09/14 by M. L. Savchenko, D. A. Kozlov, Savchenko, M. L. +11
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2409.09409
openalex publication_date 2024/09/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of Rxx of the order of h/e2, is found around the point of charge neutrality. It is shown that the zero plateau is formed by the counter-propagating chiral electron-hole edge channels, the scattering between which is suppressed. So, phenomenologically, the quantum spin Hall effect is reproduced, but with preserved ballisticity on macroscopic scales (larger than 1mm). It is shown that the formation of the QHE occurs in a two-dimensional (2D) accumulation layer near the gate, while the bulk carriers play the role of an electron reservoir. Due to the exchange of carriers between the reservoir and the 2D layer, an anomalous scaling of the QHE is observed not with respect to the CNP, but with respect to the first electron plateau.