Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

2005/09/14 by T G Emam, Tarek Emam, Emam, T G
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/0509375

6 pages including 2 figures

arxiv created 2005/09/14 · openalex publication_date 2005/09/14 · arxiv updated 2009/12/01 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28

Abstract

This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_1-x As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, 300 K, and is also increased by about 23% over that associated with temperature of 500 K.

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