Physics of Semiconductor Devices

1975/09/01 by B A Prew, B.A. Prew · 4 citations
Chemistry · Engineering · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Composite material #Condensed matter physics #Electrical resistivity and conductivity #Engineering physics #Materials science #Nanotechnology research and applications #Optoelectronics #Physics #Quantum mechanics #Semiconductor #Surface and Thin Film Phenomena #Temperature coefficient

paper · doi:10.1088/0031-9112/26/9/031

openalex publication_date 1975/09/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

In elementary textbooks semiconductors are often defined as being a class of materials having electrical conductivities intermediate between those of metals and insulators. They are also said to be characterized by a negative temperature coefficient of resistivity, in contrast to the positive coefficient exhibited by metals.

Cited by

• Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures
• Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
• Donor activation and damage in Si–SiO2from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs
• Spin-dependent processes at the crystallineSi-SiO2interface at high magnetic fields

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