2004/11/08 by D. R. McCamey, Dane R. McCamey, M. Francis +8 · 1 citation
Chemistry · Engineering · Physics and Astronomy · #Activation energy #Advanced Memory and Neural Computing #Advancements in Semiconductor Devices and Circuit Design #Analytical Chemistry (journal) #Annealing (glass) #Atomic physics #Chemistry #Composite material #Dielectric #Electrical engineering #Gate oxide #Ion #Ion implantation #Low energy #Materials science #Optoelectronics #Semiconductor materials and devices #Silicon #Threshold voltage #Transistor #Voltage #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/0268-1242/20/5/007
published as Semiconductor Science and Technology 20, 363 (2005) · 11 pages, 10 figures
arxiv created 2004/11/08 · openalex publication_date 2005/03/01 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 electrically active traps, whilst no increase in the number of traps is seen for comparable silicon implants. This result shows that the additional traps are ionized P donors, and not damage due to the implantation process. We also find, using the room temperature threshold voltage shift, that the electrical activation of donors at an implant density of 2x1012 cm-2 is ~100%.