2008/02/29 by D. R. McCamey, Dane R. McCamey, Gavin W. Morley +9
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Chemistry #Condensed matter physics #Crystallography #Electron paramagnetic resonance #Hyperfine structure #Nuclear magnetic resonance #Paramagnetism #Physics #Quantum and electron transport phenomena #Semiconductor materials and devices #Spin (aerodynamics) #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1103/physrevb.78.045303
published as Phys. Rev. B 78, 045303 (2008) · 10 pages, 4 figures
arxiv created 2008/06/05 · openalex publication_date 2008/07/02 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
An experimental study on the nature of spin-dependent excess charge-carrier transitions at the interface between (111)-oriented phosphorous-doped ([P]\ensuremath≈1015 cm^\ensuremath-3) crystalline silicon and silicon dioxide at high magnetic field (B0\ensuremath≈8.5 T) is presented. Electrically detected magnetic-resonance (EDMR) spectra of the hyperfine split 31P donor-electron transitions and paramagnetic interface defects were conducted at temperatures in the range of 3 K\ensuremath≤T\ensuremath≤12 K. The results at these previously unattained (for EDMR) magnetic-field strengths reveal the dominance of spin-dependent processes that differ from the previously well investigated recombination between the 31P donor and the Pb state, which dominates at low magnetic fields. While magnetic resonant current responses due to 31P and Pb states are still present, they do not correlate and only the Pb contribution can be associated with an interface process due to spin-dependent tunneling between energetically and physically adjacent Pb states. This work provides an experimental demonstration of spin-dependent tunneling between physically adjacent and identical electronic states as proposed by Kane [Nature (London) 393, 133 (1998)] for readout of donor qubits.