Memory resistor based in GaAs 2D-bilayers: In and out of equilibrium

2024/09/18 by Christian Marty, Marty, Christian, Zijin Lei +9
Engineering · #Advanced Memory and Neural Computing #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2409.11850

openalex publication_date 2024/09/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels of the two quantum wells align. Detuning the Fermi levels out of the resonant 2D-2D tunneling regime causes a negative differential resistance. The negative differential resistance leads to a hysteresis when operating the device in a current driven mode, allowing a bilayer system to function as a volatile memory resistor.

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