1997/12/22 by W. Poirier, Poirier, W., D. Mailly +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.dis-nn #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/9712270
23 pages, 19 figures
arxiv created 1997/12/22 · openalex publication_date 1997/12/22 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely within one electron model without introducing Coulomb blockade considerations.