2002/09/19 by Adam E. Hansen, A. E. Hansen, Anders Kristensen +6
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0209465
5 pages, 3 figures
arxiv created 2002/09/19 · openalex publication_date 2002/09/19 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance G versus gate voltage Vg, exhibit a systematic downward shift in gate voltage with increasing temperature. The effect is 'universal', in the sense that it is observed in different modulation doped GaAs/GaAlAs heterostructures, in different device geometries, and using different measurement setups. Our observations indicate that the effect originates in the surrounding 2D electron gas and not in the mesoscopic devices themselves.