2013/04/16 by Sergey Savel’ev, Savel'ev, Sergey E., Fabio Marchesoni +3
Engineering · Neuroscience · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Neural dynamics and brain function #stochastic dynamics and bifurcation
paper · pdf · doi:10.48550/arxiv.1304.4501
openalex publication_date 2013/04/16 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule's heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and a negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f2→ 1/f crossover, in agreement with recent experimental results.