2024/01/29 by Sahitya Yarragolla, Yarragolla, Sahitya, Torben Hemke +5
Engineering · Neuroscience · #Advanced Memory and Neural Computing #CCD and CMOS Imaging Sensors #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Neural dynamics and brain function
paper · pdf · doi:10.48550/arxiv.2401.16057
openalex publication_date 2024/01/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A physics-inspired compact model is used to effectively capture the underlying mechanisms governing resistive switching in NbO\rm x and BiFeO3 based on memristive devices. The model includes different capacitive components in metal-insulator-metal structures to simulate capacitive effects. Drift and diffusion of particles are modeled and correlated with particles' inertia within the system. Using the model, we obtain the I-V characteristics of both devices that show good agreement with experimental findings and the corresponding C-V characteristics. This model also replicates observed non-zero crossing hysteresis in perovskite-based devices. Additionally, the study examines how the reactance of the device changes in response to variations in the device area and length.