2022/01/18 by A. Tosato, Beatrice Matilde Ferrari, Tosato, A. +11 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.2201.06862
openalex publication_date 2022/01/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34×105 cm2/Vs and a low percolation density of 2.38×1010 cm-2. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0×1011 cm-2 the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of ∼0.69 meV, in agreement with Schrödinger-Poisson simulations.