2025/10/03 by Asser Elsayed, Elsayed, Asser, Davide Costa +13
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.2510.02794
openalex publication_date 2025/10/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas is commonly estimated by the critical, percolation-driven density associated with the metal-insulator transition. However, a reliable estimation of the critical density within percolation theory is hindered by the need to measure conductivity with high precision at low carrier densities, where experiments are most difficult. Here, we connect experimentally percolation density and quantum Hall plateau width, in line with an earlier heuristic intuition, and offer an alternative method for characterizing semiconductor heterostructure disorder.