Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

2024/01/22 by Yuichi Oshima, Shingo Yagyu, Takashi Shinohe
#dislocation #etching #α-Ga2O3

paper · doi:10.48505/nims.4355

Abstract

JOURNAL OF CRYSTAL GROWTH. 576 (2021)126387-126387

Related

• Atomic scale observation of threading dislocations in α-Ga2O3
• Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
• Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
• Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
• Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3