Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

2024/01/22 by Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa +1
#ELO #dislocation #α-Ga2O3

paper · doi:10.48505/nims.4357

Abstract

Applied Physics Express. 13 [7] (2020)75507-75507

Related

• Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
• Atomic scale observation of threading dislocations in α-Ga2O3
• Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
• Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
• Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy