Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy

2024/06/22 by Yuichi Oshima, Hiroyuki Ando, Takashi Shinohe
#HVPE #dislocation #α-Ga2O3

paper · doi:10.48505/nims.4397

Abstract

Applied Physics Express. 16 [6] (2023)

Related

• Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
• Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
• Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy
• Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
• Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy