3D Modeling and optimization of SiC deposition from CH3SiCl3/H2 in a commercial hot wall reactor

2020/11/05 by Balamurugan Deivendran, Vijay M. Shinde, V. M. Shinde +2 · 3 citations
Chemistry · Engineering · #Buoyancy #Chemistry #Chromatography #Computational fluid dynamics #Deposition (geology) #Grashof number #Heat transfer #High-Temperature Coating Behaviors #Materials science #Mechanics #Natural convection #Nusselt number #Physics #Response surface methodology #Reynolds number #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies #Thermodynamics #Turbulence

paper · doi:10.1016/j.jcrysgro.2020.125944

openalex publication_date 2020/11/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Citations

• Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Cited by

• Numerical investigation on the effect of growth conditions on silicon carbide growth in chemical vapor deposition
• Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor. [europepmc]
• CFD simulation of CVD reactors in the CH 3 SiCl 3 (MTS)/H 2 system using a two-step MTS decomposition and one-step SiC growth models. [europepmc]