Numerical investigation on the effect of growth conditions on silicon carbide growth in chemical vapor deposition

2025/02/19 by Guangyu Zheng, Yukang Sun, Simin Liu +4
Chemistry · Engineering · #Chemical engineering #Chemical vapor deposition #Chemistry #Deposition (geology) #Engineering #Geology #Materials science #Metallurgy #Nanotechnology #Plasma-enhanced chemical vapor deposition #Silicon #Silicon Carbide Semiconductor Technologies #Silicon and Solar Cell Technologies #Silicon carbide #Thin-Film Transistor Technologies

paper · doi:10.1016/j.jcrysgro.2025.128108

openalex publication_date 2025/02/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Citations

• On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters
• Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept
• 3D Modeling and optimization of SiC deposition from CH3SiCl3/H2 in a commercial hot wall reactor