2016/03/24 by A. Pertsova, Anna Pertsova, C. M. Canali +1
Materials Science · Mathematics · Physics and Astronomy · #Advanced Condensed Matter Physics #Condensed matter physics #Electron #Geometry #Graphene research and applications #Insulator (electricity) #Mathematics #Optoelectronics #Physics #Quantum #Quantum Hall effect #Quantum anomalous Hall effect #Quantum mechanics #Quantum spin Hall effect #Ribbon #Semiconductor #Surface (topology) #Surface states #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.94.121409
published as Phys. Rev. B 94, 121409 (2016) · 5 pages, 4 figures
arxiv created 2016/03/24 · openalex publication_date 2016/09/26 · arxiv updated 2016/10/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically doped Bi2Se3-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit nonzero longitudinal resistance in samples with accurately quantized Hall conductances.