Quantum Anomalous Hall Effect inHg1−yMnyTeQuantum Wells

2008/02/19 by Chao‐Xing Liu, Chao-Xing Liu, Xiao‐Liang Qi +4 · 21 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Ferromagnetism #Graphene research and applications #Landau quantization #Magnetic field #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Spin (aerodynamics) #Spintronics #Topological Materials and Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.101.146802

published as Phys. Rev. Lett. 101, 146802 (2008) · 5 pages, 3 figures. For high resolution figures see final published version when available

arxiv created 2008/02/19 · openalex publication_date 2008/10/01 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/31

Abstract

The quantum Hall effect is usually observed when a two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg_1\ensuremath-yMn_yTe quantum wells, without an external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

Citations

• Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Band structure of semimagneticHg1−yMnyTequantum wells

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