2016/05/28 by Cui-Zu Chang, Jinsong Zhang, Xiao Feng +20 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1126/science.1234414
published as Science 340, 167 (2013) · 11 pages, 4 figures
arxiv created 2016/05/28 · arxiv updated 2016/05/31
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.