Trilayer graphene is a semimetal with a gate-tunable band overlap

2009/04/26 by Monica F. Craciun, M. F. Craciun, Saverio Russo +9 · 6 citations
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Graphene research and applications #Quantum and electron transport phenomena

paper · doi:10.1038/nnano.2009.89

crossref issued 2009/04/26 · crossref published 2009/04/26 · crossref published-online 2009/04/26 · openalex publication_date 2009/04/26 · crossref created 2009/04/26 · crossref published-print 2009/06/01 · crossref deposited 2021/08/06 · openalex created_date 2025/10/10 · crossref indexed 2026/04/17 · openalex updated_date 2026/08/01

Citations

• Gate-induced insulating state in bilayer graphene devices
• Band Structure of Graphite
• Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
• Ultrahigh electron mobility in suspended graphene
• Electric Field Effect in Atomically Thin Carbon Films
• Intercalation compounds of graphite
• Band Structure of Graphite and de Haas-van Alphen Effect
• Detection of individual gas molecules adsorbed on graphene
• Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
• Intrinsic and extrinsic performance limits of graphene devices on SiO2
• Intercalation compounds of graphite

Cited by

• High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition
• Accessing the transport properties of graphene and its multi-layers at high carrier density
• Novel Highly Conductive and Transparent Graphene‐Based Conductors
• Manipulation of domain-wall solitons in bi- and trilayer graphene
• Dirac electronic states in graphene systems: optical spectroscopy studies
• Monica Craciun [wikipedia]