2018/01/19 by Lili Jiang, Sheng Wang, Zhiwen Shi +7 · 1 citation
Materials Science · Physics and Astronomy · #Graphene research and applications #Topological Materials and Phenomena #Quantum and electron transport phenomena #Stacking #Graphene #Materials science #Anisotropy #Condensed matter physics #Domain (mathematical analysis) #Enhanced Data Rates for GSM Evolution #Nanotechnology #Quantum #Layer (electronics) #Physics #Optics #Computer science #Quantum mechanics
paper · doi:10.1038/s41565-017-0042-6
openalex publication_date 2018/01/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
Topological dislocations and stacking faults greatly affect the performance of functional crystalline materials1–3. Layer-stacking domain walls (DWs) in graphene alter its electronic properties and give rise to fascinating new physics such as quantum valley Hall edge states4–10. Extensive efforts have been dedicated to the engineering of dislocations to obtain materials with advanced properties. However, the manipulation of individual dislocations to precisely control the local structure and local properties of bulk material remains an outstanding challenge. Here we report the manipulation of individual layer-stacking DWs in bi- and trilayer graphene by means of a local mechanical force exerted by an atomic force microscope tip. We demonstrate experimentally the capability to move, erase and split individual DWs as well as annihilate or create closed-loop DWs. We further show that the DW motion is highly anisotropic, offering a simple approach to create solitons with designed atomic structures. Most artificially created DW structures are found to be stable at room temperature. Layer-stacking domain walls in bi- and trilayer graphene are engineered individually and moved, erased and mechanically split by means of an atomic force microscope tip.