2014/02/07 by Vinod K. Sangwan, Deep Jariwala, Ken Everaerts +6
Engineering · Materials Science · Physics and Astronomy · #Dielectric #Electron mobility #Electronics #Graphene #Graphene research and applications #Molecular Junctions and Nanostructures #Organic Electronics and Photovoltaics #Saturation (graph theory) #Saturation current #Threshold voltage #Transistor #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4866387
arxiv created 2014/02/07 · openalex publication_date 2014/02/24 · arxiv updated 2015/06/18 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10−5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.