2013/02/07 by Vinod K. Sangwan, Deep Jariwala, Stephen A. Filippone +6 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #Dielectric #Dielectric strength #Electrical engineering #Ferroelectric and Negative Capacitance Devices #Gate dielectric #Graphene #Graphene research and applications #Materials science #Monolayer #Nanotechnology #Optoelectronics #Semiconductor materials and devices #Transistor #Voltage #Wafer #Weibull distribution #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/nl3045553
openalex publication_date 2013/02/07 · arxiv created 2013/02/09 · arxiv updated 2013/02/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The full potential of graphene in integrated circuits can only be realized with a reliable ultrathin high-κ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogeneous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter β > 25) and large breakdown strengths (Weibull scale parameter, E(BD) > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates.