2005/10/07 by Yung-Fu Chen, Yung‐Fu Chen, Michael S. Fuhrer +1 · 93 citations
Materials Science · Physics and Astronomy · #Ambipolar diffusion #Ballistic conduction #Carbon Nanotubes in Composites #Carbon nanotube #Condensed matter physics #Drift velocity #Electric field #Electron #Graphene research and applications #Materials science #Nanotechnology #Phonon #Physics #Quantum mechanics #Saturation (graph theory) #Saturation current #Saturation velocity #Semiconductor materials and interfaces #Velocity saturation #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.95.236803
published in Physical Review Letters 95(23), 236803 (American Physical Society) · to appear in Phys. Rev. Lett
arxiv created 2005/10/07 · openalex publication_date 2005/11/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 microA, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity-saturation model with a saturation velocity of 2 x 10(7) cm/s.