Effects of interface electric field on the magnetoresistance in spin devices

2013/10/03 by Tetsufumi Tanamoto, T. Tanamoto, M. Ishikawa +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Asymmetry #Condensed matter physics #Current (fluid) #Diffusion #Electric field #Field (mathematics) #Interface (matter) #Magnetic field #Magnetoresistance #Materials science #Molecule #Nuclear magnetic resonance #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum tunnelling #Semiconductor materials and devices #Spin (aerodynamics) #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.4872137

5 pages, 3 figures

arxiv created 2013/10/03 · openalex publication_date 2014/04/25 · arxiv updated 2015/06/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

Citations

• Macroscopic physics of the silicon inversion layer
• A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
• Theory of the perpendicular magnetoresistance in magnetic multilayers
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Electronic measurement and control of spin transport in silicon
• Spin transport theory in ferromagnet/semiconductor systems with noncollinear magnetization configurations
• Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor
• Physics of Semiconductor Devices
• On the Quantum Correction For Thermodynamic Equilibrium