2006/02/04 by X. Lou, C. Adelmann, Christoph Adelmann +6 · 3 citations
Physics and Astronomy · #Biasing #Condensed matter physics #Drop (telecommunication) #Electric field #Electrical engineering #Electron #Ferromagnetism #Magnetic field #Magnetic properties of thin films #Magnetic semiconductor #Materials science #Optoelectronics #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Schottky barrier #Semiconductor #Spin (aerodynamics) #Spin Hall effect #Spin diffusion #Spin polarization #Spinplasmonics #Spins #Voltage #Voltage drop #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.96.176603
Submitted to Phys. Rev. Lett
arxiv created 2006/02/04 · openalex publication_date 2006/05/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and -GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.