1987/05/15 by M. G. Ancona, Mario G. Ancona, H. F. Tiersten · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Nanowire Synthesis and Applications #Semiconductor materials and interfaces #Thermal properties of materials
paper · doi:10.1103/physrevb.35.7959
openalex publication_date 1987/05/15 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/29
The diffusion-drift description of electrons and holes in a semiconductor is frequently used to obtain a detailed understanding of the physics and engineering of semiconductor devices. We show that, by generalizing the equation of state of the electron gas to include density-gradient dependences, this standard description can be extended to describe much of the quantum-mechanical behavior exhibited by strong inversion layers.