2003/10/27 by S. Sugahara, Satoshi Sugahara, M. Tanaka +1 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Magnetic properties of thin films #Quantum and electron transport phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1689403
5 pages, 3 figures
arxiv created 2003/10/27 · openalex publication_date 2004/03/20 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/01
We propose and theoretically analyze a metal–oxide–semiconductor field-effect-transistor (MOSFET) type of spin transistor (spin MOSFET) consisting of a MOS structure and half-metallic-ferromagnet (HMF) contacts for the source and drain. When the magnetization configuration of the HMF source and drain is parallel (antiparallel), highly spin-polarized carriers injected from the HMF source to the channel are transported into (blocked by) the HMF drain, resulting in the magnetization-configuration-dependent output characteristics. Our two-dimensional numerical analysis indicates that the spin MOSFET exhibits high (low) current drive capability in the parallel (antiparallel) magnetization, and that extremely large magnetocurrent ratios can be obtained. Furthermore, the spin MOSFET satisfies other important requirements for “spintronic integrated circuits,” such as high amplification capability, low power-delay product, and low off-current.