Epitaxial ferromagnetic Fe3Si∕Si(111) structures with high-quality heterointerfaces

2008/09/29 by K. Hamaya, Kohei Hamaya, K. Ueda +8
Physics and Astronomy · #Magnetic properties of thin films #Semiconductor materials and interfaces #Surface and Thin Film Phenomena #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.2996581

published as Appl. Phys. Lett. 93, 132117 (2008) · 3 pages, 3 figures

openalex publication_date 2008/09/29 · arxiv created 2008/10/16 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe3Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130°C, we realize the epitaxial growth of ferromagnetic Fe3Si layers on Si(111) with an abrupt interface, and the grown Fe3Si layer has the ordered DO3 phase. Measurements of magnetic and electrical properties for the Fe3Si∕Si(111) yield a magnetic moment of ∼3.16μB∕f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ∼1.08, respectively.

Citations

• A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
• Performance of a spin-based insulated gate field effect transistor