1971/01/01 by Leon O. Chua, L. Chua · 27 citations
Engineering · Materials Science · #Advanced Memory and Neural Computing #Phase-change materials and chalcogenides #Transition Metal Oxide Nanomaterials
paper · doi:10.1109/tct.1971.1083337
crossref issued 1971/01/01 · crossref published 1971/01/01 · crossref published-print 1971/01/01 · openalex publication_date 1971/01/01 · crossref created 2008/09/12 · crossref deposited 2021/11/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04 · crossref indexed 2026/08/05
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the chargeq(t)≡ ∫-∞t i(τ) d \tauand the flux-linkageφ(t)≡ ∫- ∞t v(τ) d \tauis introduced as the fourth basic circuit element. An electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented. Many circuit-theoretic properties of memistors are derived. It is shown that this element exhibits some peculiar behavior different from that exhibited by resistors, inductors, or capacitors. These properties lead to a number of unique applications which cannot be realized withRLCnetworks alone. Although a physical memristor device without internal power supply has not yet been discovered, operational laboratory models have been built with the help of active circuits. Experimental results are presented to demonstrate the properties and potential applications of memristors.