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The fourth element: characteristics, modelling and electromagnetic theory of the memristor

2010/02/17 by O. Kavehei, Omid Kavehei, A. Iqbal +8 · 225 citations
Engineering · Neuroscience · Physics and Astronomy · #Advanced Memory and Neural Computing #Computer science #Electrical engineering #Electronic circuit #Electronic engineering #Engineering #Ferroelectric and Negative Capacitance Devices #Integrated circuit #Materials science #Memistor #Memristor #Nanoelectronics #Nanotechnology #Neural dynamics and brain function #Resistive random-access memory #Spice #Topology (electrical circuits) #Voltage #cond-mat.mes-hall #physics.class-ph

paper · pdf · doi:10.1098/rspa.2009.0553

published in Proceedings of the Royal Society A Mathematical Physical and Engineering Sciences 466(2120), 2175-2202 (Royal Society) · 28 pages, 14 figures, Accepted as a regular paper - the Proceedings of Royal Society A

arxiv created 2010/02/17 · openalex publication_date 2010/03/17 · arxiv updated 2015/05/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

In 2008, researchers at the Hewlett–Packard (HP) laboratories published a paper in Nature reporting the development of a new basic circuit element that completes the missing link between charge and flux linkage, which was postulated by Chua in 1971 (Chua 1971 IEEE Trans. Circuit Theory 18 , 507–519 ( doi:10.1109/TCT.1971.1083337 )). The HP memristor is based on a nanometre scale TiO 2 thin film, containing a— doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and non-volatile RAM, they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application-specific integrated circuits and field programmable gate arrays. A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for integrated circuits. This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell’s equations. We also review Chua’s arguments based on electromagnetic theory.

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