2015/03/12 by Xiao Shen, Timothy J. Pennycook, David Hernandez‐Martin +13
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Bilayer #Current density #Density functional theory #Electric field #Field (mathematics) #Joule heating #Magnetic and transport properties of perovskites and related materials #Memristor #Multiferroics and related materials #Oxide #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1002/admi.201600086
published as Advanced Materials Interfaces 3, 1600086 (2016)
arxiv created 2015/03/12 · openalex publication_date 2016/05/27 · arxiv updated 2016/06/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06
Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two‐terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This study reports memristive switching in La 0.7 Ca 0.3 MnO 3 /PrBa 2 Cu 3 O 7 bilayers with an on/off ratio greater than 10 3 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin‐polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. The results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.