Memory effects in complex materials and nanoscale systems

2010/11/12 by Yuriy V. Pershin, Massimiliano Di Ventra · 46 citations
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Ferroelectric and Negative Capacitance Devices #Transition Metal Oxide Nanomaterials #cond-mat.mes-hall

paper · pdf · doi:10.1080/00018732.2010.544961

published as Advances in Physics 60, pages 145-227 (2011) · Review submitted to Advances in Physics

arxiv created 2010/11/12 · arxiv updated 2011/03/02

Abstract

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here the memory properties of various materials and systems which appear most strikingly in their non-trivial time-dependent resistive, capacitative and inductive characteristics. We describe these characteristics within the framework of memristors, memcapacitors and meminductors, namely memory circuit elements whose properties depend on the history and state of the system. We examine basic issues related to such systems and critically report on both theoretical and experimental progress in understanding their functionalities. We also discuss possible applications of memory effects in various areas of science and technology ranging from digital to analog electronics, biologically-inspired circuits, and learning. We finally discuss future research opportunities in the field.

Cited by

• Nanoionic memristive phenomena in metal oxides: the valence change mechanism
• Introduction to neuromorphic functions of memristors: The inductive nature of synapse potentiation
• Memory effects in pulsed optomechanical systems
• Uniform and Piece-wise Uniform Fields in Memristor Models
• Oscillating electroosmotic flow in channels and capillaries with modulated wall charge distribution
• Global Mittag-Leffler stability and synchronization of memristor-based fractional-order neural networks
• A Quantifiable Information-Processing Hierarchy Provides a Necessary Condition for Detecting Agency
• Synchronization stability of memristor-based complex-valued neural networks with time delays
• Advancing Logic Circuits With Halide Perovskite Memristors for Next‐Generation Digital Systems
• Generic Extensional Framework for the Memristive Systems
• Polynomial-time solution of prime factorization and NP-complete problems with digital memcomputing machines
• Voltage-Controlled Oscillator and Memristor-Based Analog Computing for Solving Systems of Linear Equations
• Memcomputing and Swarm Intelligence
• Neuromorphic heat transport effects in a molecular junction
• Atomistic spin dynamics with quantum colored noise
• Solution-based manufacturing of 2D materials for memristive device applications
• Photogalvanic effect in hydrodynamic flows of nonreciprocal electron liquids
• Event2Audio: Event-Based Optical Vibration Sensing
• Review on memristor application in neural circuit and network
• Dynamics and propagation of memristive neuron models with electrical fields
• Purely Mechanical Memristors: Perfect Massless Memory Resistors, the Missing Perfect Mass-Involving Memristor, and Massive Memristive Systems
• Memory elements in the electrical network of Mimosa pudica L. [europepmc]
• Tunnel junction based memristors as artificial synapses. [europepmc]
• Coupling Resistive Switching Devices with Neurons: State of the Art and Perspectives. [europepmc]
• A Collective Study on Modeling and Simulation of Resistive Random Access Memory. [europepmc]
• Snap-through transition of buckled graphene membranes for memcapacitor applications. [europepmc]
• Dynamical nonlinear memory capacitance in biomimetic membranes. [europepmc]
• Memristor Circuits for Simulating Neuron Spiking and Burst Phenomena. [europepmc]
• Fluoride-Induced Negative Differential Resistance in Nanopores: Experimental and Theoretical Characterization. [europepmc]
• Chemical Inductor. [europepmc]
• Dynamic Instability and Time Domain Response of a Model Halide Perovskite Memristor for Artificial Neurons. [europepmc]
• Extended and Generic Higher-Order Elements for MEMS Modeling. [europepmc]
• Bilayer Lipid Membrane as Memcapacitance: Capacitance-Voltage Pinched Hysteresis and Negative Insertion Conductance. [europepmc]
• Electrical Charge Coupling Dominates the Hysteresis Effect of Halide Perovskite Devices. [europepmc]
• Physical evidence of meminductance in a passive, two-terminal circuit element. [europepmc]
• Theory of Hysteresis in Halide Perovskites by Integration of the Equivalent Circuit. [europepmc]
• Hydrophobically gated memristive nanopores for neuromorphic applications. [europepmc]
• An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM. [europepmc]
• Hysteresis in memristors produces conduction inductance and conduction capacitance effects. [europepmc]
• Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory. [europepmc]
• pH-Dependent Effects in Nanofluidic Memristors. [europepmc]
• Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model. [europepmc]
• Bifurcation and Frequency Properties of S-Type Neuronic Oscillators. [europepmc]
• Gel-Based Ionic Circuits. [europepmc]
• Colossal emergent inductance in a molecular memristor. [europepmc]
• Self-Oscillatory Neuron-like Devices for Unconventional Computing Applications. [europepmc]

Related

• Biologically-Inspired Electronics with Memory Circuit Elements
• Memristive Systems Analysis of 3-Terminal Devices
• A biology-inspired model for the electrical response of solid state memristors
• Beyond Memristor: Neuromorphic Computing Using Meminductor
• Memristors for the Curious Outsiders