2015/03/21 by Sascha Vongehr, Vongehr, Sascha
Engineering · Materials Science · #Advanced Memory and Neural Computing #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #General Physics (physics.gen-ph) #Transition Metal Oxide Nanomaterials
paper · pdf · doi:10.48550/arxiv.1504.00300
openalex publication_date 2015/03/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We define a mechanical analog to the electrical basic circuit element M = dϕ/dQ, namely the ideal mechanical memristance M = dp/dx; p is momentum. We then introduce a mechanical memory resistor which has M(x) independent of velocity v, so it is a perfect (= not-just-memristive) memristor, although its memristance does not crucially involve inert mass. It is practically realizable with a 1cm radius hollow sphere in heavy fuel oil with a temperature gradient. It has a pinched hysteretic loop that collapses at high frequency in the v versus p plot. The mechanical system clarifies the nature of memristor devices that can be hypothesized on grounds of physical symmetries. We hypothesize a missing mechanical perfect memristor, which must be crucially mass-involving (MI) precisely like the 1971 implied EM memristor device needs magnetism. We also construct MI memristive nano systems, which clarifies why perfect MI memristors and EM memristors are still missing and likely impossible.